Pure Storage

300TB Flash Drives Due in 2026, Provider Claims

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Pure Storage, a provider of all-flash storage units, expects capability of its proprietary direct flash module (DFM) solid-state drives to extend by six instances in a number of years, resulting in 300TB capacities. The corporate expects developments of 3D NAND areal density pushed by elevated variety of layers and different elements to allow such a dramatic capability enhance. SSDs for consumer PCs are additionally anticipated to realize capability within the coming years, however not as dramatically. 

“The plan for us over the subsequent couple of years is to take our arduous drive aggressive posture into a complete new house,” stated Alex McMullan, CTO of Pure Storage, in an interview with Blocks & Recordsdata. “At present we’re delivery 24TB and 48TB [DFM] drives. You may anticipate […] plenty of bulletins from us at our Speed up convention round bigger and bigger drive sizes with our said ambition right here to have 300TB drive capabilities, by or earlier than 2026.” 

Pure Storage’s proprietary DirectFlash Module (DFM) drives are used solely with the corporate’s FlashArray and FlashBlade storage methods. DFMs resemble ruler form-factor SSDs and even use normal U.2 NVMe connectivity, however they’re designed solely for specific machines. The modules use enterprise-grade SSD controllers albeit with totally customized firmware in addition to 3D TLC or 3D QLC NAND reminiscence units although it’s unclear whether or not the corporate makes use of any customized packaging to extend capability of its flash chips. 

(Picture credit score: Pure Storage)

There are a number of methods the way to enhance capability of Pure’s DFM by six instances in three years, however it’s not going to be simple. The obvious means is to make use of extra subtle 3D NAND ICs. These days the corporate makes use of 3D NAND units with 112 to 160 layers, whereas within the subsequent 5 years the variety of energetic layers is ready to extend to 400 to 500, Pure says, which can enhance capability of 3D NAND ICs.  

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