Smasung First to GAA Node, Beating Intel, TSMC

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When Samsung introduced earlier this 12 months that it had began quantity manufacturing of chips utilizing its 3GAE (3nm-class, gate-all-around early) course of know-how, it by no means revealed what sort of parts it made on its modern node. Because it seems, Samsung makes use of 3GAE to fab an application-specific built-in circuit (ASIC) for cryptocurrency mining.

Samsung 3GAE fabrication know-how is the business’s first course of that depends on gate-all-around (GAA) transistors which Samsung calls MBCFETs (multi-bridge channel field-effect transistors). GAA transistor structure reduces leakage present because the gate is now surrounded by the channel throughout all 4 sides; it additionally permits alteration of transistor efficiency and energy consumption by adjusting the channel’s thickness of the channel(s). GAAFETs are notably helpful for high-performance and cell purposes, which is why firms like Intel and TSMC are working laborious to make use of them in 2024 – 2025.

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