Samsung Begins 3nm Production: World's First Gate-All-Around Transistors

Samsung Begins 3nm Manufacturing: World’s First Gate-All-Round Transistors

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Samsung Foundry had began the preliminary manufacturing of chips utilizing its 3GAE fabrication course of, the corporate introduced (opens in new tab) at this time. The brand new 3GAE (3nm-class gate-all-around early) manufacturing expertise is ready to enhance efficiency, lower down energy consumption, and improve transistor density. Nonetheless, to take action, early designs should be tailor-made for the node, which primarily implies that 3nm GAA shouldn’t be for everybody simply but. 

“Samsung Electronics, the world chief in semiconductor expertise, at this time introduced that it has began preliminary manufacturing of its 3-nanometer (nm) course of node making use of Gate-All-Round (GAA) transistor structure,” the assertion from the corporate reads. 

Samsung manufacturers its 3GAE gate-all-around field-effect transistors (GAAFETs) as multi-bridge channel field-effect transistors (MBCFETs). The transistors’ decreased leakage present is among the key options, because the gate is now surrounded by the channel throughout all 4 sides. One other benefit is that thickness of the channel(s) might be regulated to spice up efficiency and/or decrease energy consumption. In concept, that is what 3GAE is all about, however it is not that easy. 

(Picture credit score: Samsung)

Primarily based on the press launch by Samsung Foundry (SF), its 3GAE course of can scale back the facility consumption of a chip by as much as 45% on the identical density and frequency. It could actually enhance efficiency by 23%, given the identical complexity and clocks, and scale back an IC space by 16% (assuming the identical chip) in comparison with SF’s 5nm-class nodes (we presume 5LPP). 



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