TSMC Reveals 2nm Node: 30% More Performance by 2025

TSMC Reveals 2nm Node: 30% Extra Efficiency by 2025

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Taiwan Semiconductor Manufacturing Co. at present formally launched its N2 (2nm class) manufacturing expertise, its first node that can use gate-all-around field-effect transistors (GAAFETs), at its 2022 TSMC Know-how Symposium. The brand new fabrication course of will supply a full-now efficiency and energy advantages, however on the subject of transistor density, it is going to barely impress in 2025 when it comes on-line.

Being an all-new course of expertise platform, TSMC’s N2 brings in two important improvements: nanosheet transistors (which is what TSMC calls its GAAFETs) and bottom energy rail that each serve the identical purpose of accelerating performance-per-watt traits of the node. GAA nanosheet transistors function channels surrounded by gates on all 4 sides, which reduces leakage; moreover, their channels could be widened to extend drive present and enhance efficiency or shrunken to attenuate energy consumption and value. To feed these nanosheet transistors with sufficient energy and now waste any of it, TSMC’s N2 makes use of bottom energy supply, which the foundry considers to be among the many greatest options to combat resistances within the back-end-of-line (BEOL).

(Picture credit score: TSMC)

Certainly, on the subject of efficiency and energy consumption, TSMC’s nanosheet-based N2 node can boast of a ten% to fifteen% larger efficiency on the similar energy and complexity in addition to a 25% to 30% decrease energy consumption on the similar frequency and transistor rely when in comparison with TSMC’s N3E. Nonetheless, the brand new node will increase chip density by solely round 1.1X in comparison with N3E.

N2 vs N3E N3E vs N5 N3 vs N5 N5 vs N7
Pace Enchancment @ Identical Energy 10% ~ 15% +18% +10% ~ 15% +15%
Energy Discount @ Identical Pace -23% ~ -30% -34% -25% ~ -30% -30%
Chip Density >1.1X 1.3X ? ?
HVM Begin H2 2025 Q2/Q3 2023 H2 2022 Q2 2022

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